Super low contact resistance in monolayer MoS2 transistors

Breakdown of high-performance monolayer MoS2 transistors.

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS(2)) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS(2) can be used for the fabrication of transistors exhibiting extremely high on/off ra...

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors.

Ultrathin molybdenum disulphide (MoS2) has emerged as an interesting layered semiconductor because of its finite energy bandgap and the absence of dangling bonds. However, metals deposited on the semiconducting 2H phase usually form high-resistance (0.7 kΩ μm-10 kΩ μm) contacts, leading to Schottky-limited transport. In this study, we demonstrate that the metallic 1T phase of MoS2 can be locall...

High-performance MoS2 transistors with low-resistance molybdenum contacts

Articles you may be interested in Separation of interlayer resistance in multilayer MoS2 field-effect transistors Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl.

Mechanically modulated tunneling resistance in monolayer MoS2

Low-temperature photocarrier dynamics in monolayer MoS2

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